High-frequency electrical measurement and parameter extraction of InP-based photodetectors up to 100 GHz

Author

Mekonnen, G.G. ; Bach, H.-G. ; Beling, A. ; Schmidt, D. ; Seeger, A. ; Stollberg, M.

Author_Institution

Heinrich-Hertz-Inst., Fraunhofer Inst. for Telecommun., Berlin, Germany

Volume

3

fYear

2003

fDate

7-9 Oct. 2003

Firstpage

1397

Abstract

High-frequency measurement and the extraction of an extended small-signal equivalent circuit of a heterostructure InP-based photodiode in the frequency range of 45 MHz to 100 GHz was performed. Photodetectors of this type were monolithically integrated and successfully fabricated to form twin-type photodetector OEICs. The work describes the small-signal equivalent circuit of photodiodes with various active areas and layer stacks up to the frequency range of 100 GHz.

Keywords

III-V semiconductors; contact resistance; indium compounds; integrated optoelectronics; monolithic integrated circuits; p-i-n photodiodes; photodetectors; 45 MHz to 100 GHz; InP; InP-based photodetectors; OEIC; heterostructure InP-based photodiode; high frequency electrical measurement; monolithically integrated circuit; photodiodes; signal equivalent circuit; Electric variables measurement; Equivalent circuits; Frequency measurement; High speed optical techniques; Optical distortion; Optical surface waves; Optical waveguides; Parameter extraction; Photodetectors; Photodiodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2003. 33rd European

Print_ISBN

1-58053-834-7

Type

conf

DOI

10.1109/EUMC.2003.1262920

Filename

1262920