DocumentCode :
2525415
Title :
System-level design and performance modeling for multilevel interconnect networks for carbon nanotube field-effect transistors
Author :
Ceyhan, Ahmet ; Naeemi, Azad
Author_Institution :
Electr. & Comput. Eng. Dept., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2012
fDate :
May 30 2012-June 1 2012
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents the first system-level study on the impact of carbon nanotube field-effect transistors (CNFETs) on multilevel interconnect networks. In this paper, for the first time, the gains in speed and energy-delay product (EDP) offered by CNFETs over CMOS are presented as a function of interconnect length. It is demonstrated that the respective 4.3× and 8× improvements in intrinsic delay and EDP of CNFET inverters at 16nm technology node over Si-CMOS inverters are quickly overshadowed by the delay and EDP of interconnects. For repeater-inserted interconnects, the delay and EDP improvements of CNFETs saturate at 2.08× compared to CMOS. However, CNFETs offer a major advantage in terms of the required number of metal levels in a multilevel interconnect network because of the availability of a larger number of repeaters compared to Si-CMOS switches.
Keywords :
CMOS integrated circuits; carbon nanotube field effect transistors; elemental semiconductors; integrated circuit design; integrated circuit interconnections; integrated circuit modelling; invertors; repeaters; silicon; CMOS inverter; CNFET inverter; EDP; Si; carbon nanotube field-effect transistor; energy-delay product; intrinsic delay; multilevel interconnect network; performance modeling; repeater-inserted interconnects; size 16 nm; speed; system-level design; CMOS integrated circuits; CNTFETs; Delay; Integrated circuit interconnections; Logic gates; Metals; Repeaters; carbon nanotube (CNT); carbon nanotube field-effect transistor(CNFET); interconnections; multilevel systems; performance benchmarking; repeaters; system analysis and design;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IC Design & Technology (ICICDT), 2012 IEEE International Conference on
Conference_Location :
Austin, TX
ISSN :
pending
Print_ISBN :
978-1-4673-0146-6
Electronic_ISBN :
pending
Type :
conf
DOI :
10.1109/ICICDT.2012.6232851
Filename :
6232851
Link To Document :
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