DocumentCode :
2525458
Title :
A 6W uneven doherty power amplifier in GaN technology
Author :
Markos, A.Z. ; Colantonio, P. ; Giannini, F. ; Giofrè, R. ; Imbimbo, M. ; Kompa, G.
Author_Institution :
Univ. of Kassel, Kassel
fYear :
2007
fDate :
8-10 Oct. 2007
Firstpage :
299
Lastpage :
302
Abstract :
In this paper the design of a 6W uneven GaN Doherty power amplifier is presented. The Doherty PA is designed to achieve high efficiency for modulated signals with high peak to average power ratio used in modern wireless communication systems. The Doherty amplifier has been designed using two equal sized GaN devices for the Main Class AB and Peaking Class C amplifiers. An uneven power divider is used at the input to deliver more input power to the Peaking amplifier than the Main amplifier. The measured maximum output power of the realised uneven Doherty is 38 dBm with 60% of peak power added efficiency (76% of drain efficiency). The power added (drain) efficiency is higher than 52% (62%) up to 6 dB of back off, or 42% (45%) up to 10 dB of back off.
Keywords :
UHF power amplifiers; gallium compounds; power dividers; wide band gap semiconductors; Class AB amplifiers; Class C amplifiers; Doherty power amplifier; GaN; UHF power amplifiers; peaking amplifier; power 6 W; power divider; wireless communication systems; Gallium nitride; Impedance; Linearity; Microwave integrated circuits; Peak to average power ratio; Power amplifiers; Power dividers; Power generation; Radio frequency; Wireless communication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-002-6
Type :
conf
DOI :
10.1109/EMICC.2007.4412708
Filename :
4412708
Link To Document :
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