DocumentCode
2525465
Title
The effect of quantum dots on the infrared cyclotron resonance in HgSe:Fe
Author
Tran-Anh, T. ; Hansel, S. ; Kirste, A. ; Mueller, H.-U. ; von Ortenberg, M.
Author_Institution
Humboldt-Univ., Berlin, Germany
fYear
2002
fDate
26-26 Sept. 2002
Firstpage
317
Lastpage
318
Abstract
MBE-grown quantum dots of HgSe:Fe were investigated by infrared magnetotransmission using the single-turn-coil technique to generate megagauss fields. Due to the inhomogeneity of the dot size a broad absorption of the 10.6 /spl mu/m radiation is observed beyond the 2D cyclotron resonance at higher fields.
Keywords
II-VI semiconductors; cyclotron resonance; infrared spectra; iron; mercury compounds; molecular beam epitaxial growth; semiconductor quantum dots; 10.6 micron; HgSe:Fe; IR absorption; MBE-grown quantum dots; infrared absorption; infrared cyclotron resonance; infrared magnetotransmission; megagauss fields; single turn-coil technique; Absorption; Atomic force microscopy; Cyclotrons; Gallium arsenide; Magnetic fields; Magnetic resonance; Molecular beam epitaxial growth; Quantum dots; Substrates; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared and Millimeter Waves, 2002. Conference Digest. Twenty Seventh International Conference on
Conference_Location
San Diego, CA, USA
Print_ISBN
0-7803-7423-1
Type
conf
DOI
10.1109/ICIMW.2002.1076212
Filename
1076212
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