Title :
Measurement of carrier properties in InSb using Faraday rotation effect
Author :
Ogawa, I. ; Yamada, K. ; Idehara, T. ; Tsushima, A. ; Yamaguchi, S.
Author_Institution :
Fac. of Eng., Fukui Univ., Japan
Abstract :
The carrier properties of n-type InSb doped with tellurium at liquid nitrogen temperature have been estimated by means of the transmission of a millimeter wave (119.3 GHz) propagating along a magnetic field up to 4 T. The information on the carrier properties is measured by the Faraday rotation arising from the difference between the phase velocities. The advantage of this method lies in the fact that it allows both the electron density and effective mass to be measured simultaneously.
Keywords :
Faraday effect; III-V semiconductors; effective mass; electron density; indium compounds; magnetic fields; millimetre wave measurement; tellurium; 119.3 GHz; Faraday rotation effect; InSb:Te; MM-wave transmission; Te doped InSb; carrier properties measurement; effective mass measurement; electron density measurement; liquid nitrogen temperature; magnetic field; millimeter wave transmission; n-type InSb; phase velocities difference; Magnetic field measurement; Magnetic liquids; Magnetic properties; Millimeter wave measurements; Millimeter wave propagation; Nitrogen; Phase estimation; Rotation measurement; Tellurium; Temperature;
Conference_Titel :
Infrared and Millimeter Waves, 2002. Conference Digest. Twenty Seventh International Conference on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7423-1
DOI :
10.1109/ICIMW.2002.1076213
