Title :
“Phase-Change Memories for nano-scale technology and design”
Author :
Pellizzer, Fabio ; Bez, Roberto
Author_Institution :
Micron, Process R&D, Agrate Brianza, Italy
fDate :
May 30 2012-June 1 2012
Abstract :
In this paper we will review the evolution of Phase-Change Memories (PCM) through the last decade, starting from the first electrical results on single cells and ending with the latest news of multi-Gb chips. Entering into the sub-30nm realm, PCM is demonstrating the capability to enter the broad memory market and to become a mainstream technology.
Keywords :
design; nanotechnology; phase change memories; PCM; design; nanoscale technology; phase-change memories; Current density; Heating; Metals; Nonvolatile memory; Phase change materials; Phase change memory;
Conference_Titel :
IC Design & Technology (ICICDT), 2012 IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0146-6
Electronic_ISBN :
pending
DOI :
10.1109/ICICDT.2012.6232857
