Title :
Long-wavelength vertical-cavity lasers
Author :
Babic, D.I. ; Dudley, J.J. ; Mirin, R.P. ; Bowers, J.E. ; Hu, E.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
In this paper we summarize the latest developments in long-wavelength vertical-cavity lasers fabricated by wafer fusion. Record room-temperature pulsed performance was achieved at both 1.3 and 1.52 /spl mu/m wavelengths using novel vertical-cavity laser structures that utilize InP/InGaAsP active layers and AlAs/GaAs quarter-wave mirrors.<>
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser mirrors; semiconductor lasers; surface emitting lasers; 1.3 micrometre; 1.52 micrometre; AlAs/GaAs quarter-wave mirrors; InGaAsP-InP-AlAs-GaAs; InP/InGaAsP active layers; long-wavelength vertical-cavity lasers; room-temperature pulsed performance; semiconductor lasers; wafer fusion; Conducting materials; Gallium arsenide; Laser fusion; Lattices; Mirrors; Optical materials; Optical resonators; Reflectivity; Thermal conductivity; Vertical cavity surface emitting lasers;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383313
