Title :
Key properties in PbSrSe thin films and PbSe/PbSrSe quantum wells for mid-infrared optoelectronic applications
Author :
Shen, W.Z. ; Jiang, L.F. ; Yang, H.F. ; Shen, S.C.
Author_Institution :
Dept. of Phys., Shanghai Jiao Tong Univ., China
Abstract :
We review our recent investigations on PbSrSe thin film and PbSe/PbSrSe quantum well structures grown by MBE techniques for MIR optoelectronic applications. The band structures, effective mass, phonon behaviour, refractive indices etc, have been investigated by IR absorption and PL spectroscopies under different compositions, temperatures and structures, and combined with some model calculations.
Keywords :
IV-VI semiconductors; effective mass; infrared detectors; infrared spectra; lead compounds; molecular beam epitaxial growth; photoluminescence; quantum well lasers; refractive index; semiconductor growth; semiconductor quantum wells; semiconductor thin films; strontium compounds; IR absorption spectroscopy; MBE growth; PL spectroscopy; PbSe-PbSrSe; PbSe/PbSrSe quantum wells; PbSrSe; PbSrSe thin films; band structures; effective mass; infrared detectors; infrared lasers; mid-infrared optoelectronic applications; model calculations; phonon behaviour; refractive indices; Effective mass; Infrared detectors; Lead; Molecular beam epitaxial growth; Optical refraction; Optical scattering; Phonons; Quantum well devices; Temperature; Transistors;
Conference_Titel :
Infrared and Millimeter Waves, 2002. Conference Digest. Twenty Seventh International Conference on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7423-1
DOI :
10.1109/ICIMW.2002.1076217
