Title :
A matching circuit tuned, multi-band (WLAN and WiMAX), Class — a power amplifier using 0.25μm-SiGe HBT technology
Author :
Kaynak, Mehmet ; Tekin, Ibrahim ; Gurbuz, Yasar
Author_Institution :
Fac. of Eng. & Natural Sci., Sabanci Univ., Istanbul
fDate :
June 22 2008-April 25 2008
Abstract :
In this work, a MOS based output matching network is designed and fabricated using IHP (innovations for high performance), 0.25 mum-SiGe HBT process and measured which can give 4 different impedance values. Also, a multi-band, Class-A, power amplifier (PA) has been designed with same technology and the desired output impedances for matching network are taken from the load-pull simulation results of this PA. The behavior of the amplifier has been optimized for 2.4 GHz (WLAN), 3.6 GHz (UWB-WiMAX) and 5.4 GHz (WLAN) frequency bands for high output power. Multi-band characteristic of the amplifier was obtained by using MOS based switching network. Two MOS switches are used for changing the behavior of the matching network and 4 possible states are achieved. Post-Layout simulation results of the PA circuit provided the following performance parameters: output power of 28-dBm, gain value of 26-dB and efficiency value of %19 for the 2.4 GHz WLAN band, output power of 28-dBm, gain value of 22-dB and efficiency value of %20 for the 3.6 GHz UWB-WiMAX band, and output power of 27-dBm, gain value of 23-dB and efficiency value of %17 for the 5.4 GHz WLAN band.
Keywords :
Ge-Si alloys; MMIC power amplifiers; UHF power amplifiers; WiMax; bipolar MMIC; bipolar analogue integrated circuits; circuit tuning; field effect transistor switches; heterojunction bipolar transistors; impedance matching; integrated circuit design; ultra wideband communication; wireless LAN; Class-A power amplifier; HBT technology; MOS based output matching network design; MOS based switching network; SiGe; UWB-WiMAX; WLAN; frequency 2.4 GHz; frequency 3.6 GHz; frequency 5.4 GHz; gain 22 dB; gain 26 dB; gain value; impedance values; innovations for high performance; load-pull simulation; matching circuit tuning; multiband characteristics; post-layout simulation; size 0.25 mum; Heterojunction bipolar transistors; High power amplifiers; Impedance matching; Performance gain; Power amplifiers; Power generation; Technological innovation; Tuned circuits; WiMAX; Wireless LAN; Dual-Band; Power Amplifier; SiGe; WLAN; WiMAX;
Conference_Titel :
Research in Microelectronics and Electronics, 2008. PRIME 2008. Ph.D.
Conference_Location :
Istanbul
Print_ISBN :
978-1-4244-1983-8
Electronic_ISBN :
978-1-4244-1984-5
DOI :
10.1109/RME.2008.4595752
