DocumentCode :
2525532
Title :
First-ever high-performance, low-power 32-bit microcontrollers with embedded nanocrystal flash and enhanced EEPROM memories
Author :
Yater, Jane ; Kang, S.-T. ; Hong, C.M. ; Min, B. ; Kolar, D. ; Loiko, K. ; Shen, J. ; Winstead, B. ; Gasquet, H. ; Mohammed, S. ; Hardell, A. ; Malloch, W. ; Cook, B. ; Syzdek, R. ; Jarrar, A. ; Feddeler, J. ; Baker, K. ; Chang, K.M. ; Herrin, S. ; Parks,
Author_Institution :
Automotive & Ind. Solutions Group, Freescale Semicond., Inc., Austin, TX, USA
fYear :
2012
fDate :
May 30 2012-June 1 2012
Firstpage :
1
Lastpage :
3
Abstract :
We present the first-ever commercially available microcontroller families built with innovative split-gate based NOR flash memory that uses silicon nanocrystals as the storage medium. The 32-bit mixed-signal low-power Kinetis microcontroller families have nanocrystal based flash memories (referred to as TFS for `Thin Film Storage´) with a wide range of array sizes from 32KB to 1MB. In addition, the unique capability of TFS has enabled inclusion of fully configurable embedded EEPROM functionality called `FlexMemory´, which also manages wear leveling for high endurance. The TFS memory has been optimized to deliver read access time of <;30ns, fast source-side injection programming (10-20μs), fast tunnel erase into the gate (1-20ms), robust high temperature data retention before and after cycling, endurance of at least 10K cycles for flash and effective endurance up to 10M cycles in the EEPROM mode. In addition, the microcontroller core, analog and flash modules have been developed to deliver performance, reliability, and low-power operations across a temperature range of -40C to 105C and full operation down to 1.7V from a single power supply.
Keywords :
embedded systems; flash memories; integrated circuit reliability; low-power electronics; microcontrollers; mixed analogue-digital integrated circuits; nanoelectronics; silicon; thin film circuits; EEPROM mode; FlexMemory; TFS memory; analog module; embedded nanocrystal flash; enhanced EEPROM memories; flash module; microcontroller core; mixed-signal low-power Kinetis microcontroller families; nanocrystal based flash memories; reliability; source-side injection programming; split-gate based NOR flash memory; temperature -40 C to 105 C; temperature data retention; thin film storage; time 10 mus to 20 mus; voltage 1.7 V; wear leveling; word length 32 bit; Arrays; EPROM; Logic gates; Microcontrollers; Nanocrystals; Split gate flash memory cells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IC Design & Technology (ICICDT), 2012 IEEE International Conference on
Conference_Location :
Austin, TX
ISSN :
pending
Print_ISBN :
978-1-4673-0146-6
Electronic_ISBN :
pending
Type :
conf
DOI :
10.1109/ICICDT.2012.6232858
Filename :
6232858
Link To Document :
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