Title :
Enhancing optical absorption in InP and GaAs utilizing profile etching
Author :
Bailey, Sheila G. ; Fatemi, Navid S. ; Landis, Geoffrey A.
Author_Institution :
NASA Lewis Res. Center, Cleveland, OH, USA
Abstract :
The current state of profile etching in GaAs and InP is summarized, including data on novel geometries attainable as a function of etchant temperature, composition, and rate, substrate orientation and carrier concentration, and oxide thickness between substrate and photoresist. V-grooved solar cells have been manufactured with both GaAs and InP, and the improved optical absorption demonstrated. Preferred parameters for various applications are listed and discussed
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; solar cells; GaAs solar cells; InP solar cells; V-grooved solar cells; carrier concentration; etchant composition; etchant temperature; optical absorption; oxide thickness; photoresist; profile etching; semiconductor; substrate; substrate orientation; Absorption; Anisotropic magnetoresistance; Etching; Gallium arsenide; Geometry; Indium phosphide; Photovoltaic cells; Resists; Substrates; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169215
