• DocumentCode
    252583
  • Title

    SOI substrate solutions for recent advanced device applications

  • Author

    Noto, N. ; Ishikawa, O. ; Aga, H. ; Ishizuka, T. ; Yokokawa, I. ; Nakano, M.

  • Author_Institution
    Technol. & Dev. Div., Shin-Etsu Handotai Co. Ltd., Tokyo, Japan
  • fYear
    2014
  • fDate
    6-9 Oct. 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    SOI substrate technology for recent advanced device applications is reviewed from a standpoint of a dedicated wafer supplier. A structure of Si thin film on sapphire (SOS) has been used for device development and manufacturing from 1970´s. Currently a SOI substrate of Si/SiO2/Si structure is widely used for industrial applications.
  • Keywords
    CMOS integrated circuits; elemental semiconductors; integrated optics; micromechanical devices; semiconductor thin films; silicon; silicon-on-insulator; Al2O3; MEMS; RF devices; SOI CMOS technology; SOI substrate technology; Si-SiO2-Si; sapphire; silicon photonics; silicon thin film; CMOS integrated circuits; Conductivity; Performance evaluation; Radio frequency; Silicon; Silicon-on-insulator; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE
  • Conference_Location
    Millbrae, CA
  • Type

    conf

  • DOI
    10.1109/S3S.2014.7028232
  • Filename
    7028232
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=252583