Extremely thin film (10 nm) SOI MOSFET characteristics including inversion layer to accumulation layer tunneling

Author

Jin Hyeok Choi ; Young-June Park ; Hong-Shick Min

Author_Institution

Dept. of Electron. Eng., Seoul Nat. Univ., South Korea

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

645

Lastpage

648

Abstract

Extremely thin film SOI MOSFET´s (10 nm) without serious source/drain resistance have been fabricated using gate recessed structure, and their characteristics have been analyzed. The fabricated samples exhibit mobility decrease with the decrease of the silicon film thickness, and front gate bias dependent subthreshold slope behaviors. The tunneling current from the inverted front surface to the accumulated back surface, whose mechanism has not been reported so far, is observed.<>

Keywords

MOSFET; inversion layers; silicon-on-insulator; thin film transistors; tunnelling; 10 nm; accumulated back surface; accumulation layer tunneling; front gate bias dependent subthreshold slope behaviors; gate recessed structure; inversion layer; mobility; source/drain resistance; thin film SOI MOSFET characteristics; Capacitance-voltage characteristics; Dry etching; Fabrication; MOSFET circuits; Semiconductor films; Semiconductor thin films; Silicon; Surface resistance; Transistors; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383327

Filename

383327