Title :
Extremely thin film (10 nm) SOI MOSFET characteristics including inversion layer to accumulation layer tunneling
Author :
Jin Hyeok Choi ; Young-June Park ; Hong-Shick Min
Author_Institution :
Dept. of Electron. Eng., Seoul Nat. Univ., South Korea
Abstract :
Extremely thin film SOI MOSFET´s (10 nm) without serious source/drain resistance have been fabricated using gate recessed structure, and their characteristics have been analyzed. The fabricated samples exhibit mobility decrease with the decrease of the silicon film thickness, and front gate bias dependent subthreshold slope behaviors. The tunneling current from the inverted front surface to the accumulated back surface, whose mechanism has not been reported so far, is observed.<>
Keywords :
MOSFET; inversion layers; silicon-on-insulator; thin film transistors; tunnelling; 10 nm; accumulated back surface; accumulation layer tunneling; front gate bias dependent subthreshold slope behaviors; gate recessed structure; inversion layer; mobility; source/drain resistance; thin film SOI MOSFET characteristics; Capacitance-voltage characteristics; Dry etching; Fabrication; MOSFET circuits; Semiconductor films; Semiconductor thin films; Silicon; Surface resistance; Transistors; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383327
