DocumentCode :
252589
Title :
Recent advances and future trends in SOI for RF applications
Author :
Joshi, A. ; Tzung-yin Lee ; Yuh-yue Chen ; Whitefield, D.
Author_Institution :
Skyworks Solutions Inc., Irvine, CA, USA
fYear :
2014
fDate :
6-9 Oct. 2014
Firstpage :
1
Lastpage :
3
Abstract :
In recent years, RFCMOS on Silicon-on-Insulator has rapidly evolved as a mainstream technology for switches used in wireless applications. Requirements of lower insertion loss, better isolation and better linearity have driven RFCMOS-SOI roadmap. Ron*Coff, a key figure-of-merit for switch application, has scaled from > 300fs to <; 200fs. In this paper, we review commonly adopted techniques to further improve Ron*Coff, along with their limitations.
Keywords :
CMOS integrated circuits; isolation technology; radiofrequency integrated circuits; silicon-on-insulator; RFCMOS; SOI substrates; figure-of-merit; insertion loss; isolation technology; silicon-on-insulator; switch application; Capacitance; Field effect transistors; Radio frequency; Resistance; Silicon; Silicon-on-insulator; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE
Conference_Location :
Millbrae, CA
Type :
conf
DOI :
10.1109/S3S.2014.7028235
Filename :
7028235
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=252589
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