Title :
BIMOS transistor and its applications in ESD protection in advanced CMOS technology
Author :
Galy, Ph ; Jimenez, J. ; Bourgeat, J. ; Dray, A. ; Troussier, G. ; Heitz, B. ; Guitard, N. ; Marin-cudraz, D. ; Beckrich-Ros, H.
Author_Institution :
STMicroelectron., Crolles, France
fDate :
May 30 2012-June 1 2012
Abstract :
BIMOS transistor is a useful device and now compliant in advanced CMOS technology. This device acts with high controlled current gain. Thus, it is an efficient candidate for Electrostatic Discharge (ESD) protection. Moreover it is well known that ESD protection for advanced CMOS technologies is a major challenge due to down-scaling which introduces a reduction of the intrinsic robustness. This paper introduces the BIMOS ESD approach with simulations in 45nm. Silicon measurements are performed on 32 nm CMOS high k metal gate.
Keywords :
CMOS integrated circuits; MOSFET; bipolar transistors; electrostatic discharge; BIMOS transistor; CMOS high k metal gate; ESD protection; advanced CMOS technology; electrostatic discharge protection; BiCMOS integrated circuits; CMOS integrated circuits; CMOS technology; Electrostatic discharges; Logic gates; Resistors; Transistors; BIMOS transistor; CMOS; ESD protection;
Conference_Titel :
IC Design & Technology (ICICDT), 2012 IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0146-6
Electronic_ISBN :
pending
DOI :
10.1109/ICICDT.2012.6232878
