Title :
The surface acoustic wave propagation characteristics of 41° lithium niobate with thin-film SiO2
Author :
Hickernell, F.S. ; Knuth, H.D. ; Dablemont, R.C. ; Hickernell, T.S.
Author_Institution :
Motorola Gov. & Space Technol. Group, Scottsdale, AZ, USA
Abstract :
The surface acoustic wave (SAW) propagation properties of 41° Y-X lithium niobate (LiNbO3) with SiO2 film layers have been investigated using interdigital transducer structures. Different thicknesses of SiO2 from 500 nm to 1500 nm were deposited on the 41° LiNbO3 by RF diode sputtering from a glass target. An arrayed transducer pattern of aluminum interdigital transducer electrodes on the upper SiO2 film surface facilitated the excitation of a wide frequency band of harmonic waves and permitted delineation of SAW velocity and propagation loss characteristics for several values of film-thickness to acoustic-wavelength (t/λ) ratio. With resonator patterns at the substrate/film interface, the capacitance ratio (Cm/C0 ), related to coupling factor, and the temperature coefficient of frequency (TCF) were determined
Keywords :
interdigital transducers; lithium compounds; losses; silicon compounds; sputter deposition; surface acoustic wave transducers; ultrasonic propagation; ultrasonic velocity; 500 to 1500 nm; LiNbO3-SiO2; RF diode sputtering; SAW velocity; acoustic-wavelength ratio; arrayed transducer pattern; capacitance ratio; coupling factor; harmonic waves; interdigital transducer structures; loss characteristics; surface acoustic wave propagation characteristics; temperature coefficient of frequency; Acoustic propagation; Acoustic transducers; Acoustic waves; Aluminum; Diodes; Glass; Lithium niobate; Radio frequency; Sputtering; Surface acoustic waves;
Conference_Titel :
Frequency Control Symposium, 1996. 50th., Proceedings of the 1996 IEEE International.
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-3309-8
DOI :
10.1109/FREQ.1996.559846