DocumentCode :
2525924
Title :
High-efficiency balanced switched-path monolithic SiGe HBT power amplifiers for wireless applications
Author :
Grebennikov, Andrei ; Sogl, Bernhard ; Herrmann, Helmut ; Roth, Christian ; Thomann, Wolfgang
Author_Institution :
Infineon Technol. AG, Neubiberg
fYear :
2007
fDate :
8-10 Oct. 2007
Firstpage :
391
Lastpage :
394
Abstract :
Modern wireless telecommunication systems require high-efficient, linear, low cost and long talk-time solutions. The proposed novel balanced circuit for power amplifiers provides a high efficiency at maximum as well as backoff output power levels and low sensitivity to load variations. To minimize the quiescent current at low output power levels, an adaptive current-mirror bias circuit can be effectively used. Experimental results for highly efficient, linear, multi-band and multi-mode, two-stage, balanced switched-path SiGe HBT power amplifiers, intended to operate across the DCS 1800, PCS 1900, WCDMA 850/1900/2100 frequency bands, exhibit a peak power-added efficiency of ges 50 % at 33dBm and ges 20 % at 16 dBm of output power with a minimum quiescent current of 12 mA.
Keywords :
3G mobile communication; Ge-Si alloys; bipolar transistor circuits; heterojunction bipolar transistors; power amplifiers; radiofrequency amplifiers; sensitivity; DCS 1800; PCS 1900; SiGe; WCDMA; adaptive current-mirror bias circuit; balanced switched-path monolithic HBT; current 12 mA; power amplifiers; quiescent current; sensitivity; wireless telecommunication systems; Circuits; Costs; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; Power amplifiers; Power generation; Silicon germanium; Telecommunication switching; Wireless sensor networks;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-002-6
Type :
conf
DOI :
10.1109/EMICC.2007.4412731
Filename :
4412731
Link To Document :
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