DocumentCode
2525926
Title
High swing low capacitance ESD RF protections in advanced CMOS technologies
Author
Jimenez, Jean ; Galy, Philippe ; Bourgeat, Johan ; Heitz, Boris
Author_Institution
STMicroelectron., Crolles, France
fYear
2012
fDate
May 30 2012-June 1 2012
Firstpage
1
Lastpage
4
Abstract
High speed interface are more and more integrated on System On Chip (SOC) and need efficient Electro Static Discharge (ESD) protections devices. The challenge is to ensure high level of ESD protection in a very large bandwidth to address HDMI, SATA, DisplayPort and USB interfaces. Another challenge is to address a large panel of technology nodes as high seed interfaces are implemented in various technologies. This paper shows performances of RF protection devices in term of ESD robustness and frequency response. Experimental results are presented and compared in 250 nm, 130 nm and 40 nm technologies nodes and shows ability of protections to sustain 2kV Human Body Model (HBM) with 30Ghz bandwidth in large voltage dynamic range.
Keywords
CMOS integrated circuits; electrostatic discharge; frequency response; peripheral interfaces; system-on-chip; ESD protection devices; ESD robustness; HBM; HDMI; RF protection devices; SATA; SOC; USB interfaces; advanced CMOS technology; bandwidth 30 GHz; display port; electro static discharge protection devices; frequency response; high speed interfaces; high swing low capacitance ESD RF protections; human body model; size 130 nm; size 250 nm; size 40 nm; system on chip; technology nodes; very large bandwidth; voltage 2 kV; voltage dynamic range; Electrostatic discharges; Lead; Performance evaluation; Radio frequency; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
IC Design & Technology (ICICDT), 2012 IEEE International Conference on
Conference_Location
Austin, TX
ISSN
pending
Print_ISBN
978-1-4673-0146-6
Electronic_ISBN
pending
Type
conf
DOI
10.1109/ICICDT.2012.6232879
Filename
6232879
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