DocumentCode :
2525950
Title :
Classification of defects in solid insulation material by PD methods
Author :
Park, Y.G. ; Lee, H.K. ; Kim, W.S. ; Lim, K.J. ; Kang, S.H. ; Ree, J.H. ; Kim, B.H.
Author_Institution :
Dept. of Electr. Eng., Chung-Buk Nat. Univ., Cheongju, South Korea
Volume :
2
fYear :
2000
fDate :
2000
Firstpage :
749
Abstract :
Solid insulators have good insulation properties. However when they have voids or cracks in the bulk or at the surface, the electric field is concentrated and the insulation material is degraded at this point. Defects in a solid insulation system act as a source of partial discharge (PD). PD is very harmful since it often leads to deterioration of insulation by the combined action of the discharge ions bombarding the surface and the action of chemical compounds that are formed by the discharge. PD can indicate incipient failure, so it has been used to determine degradation of insulation. In this paper, we investigated the classification of PD in defects of solid insulation using a statistical method and classified patterns of PD due to surface discharge, electrical tree and void discharge by using a Kohonen network. To analysis PD we used the distribution of Hqn(q) and parameters such as peak charge, average discharge power, average discharge current, and repetition rate
Keywords :
insulating materials; insulation testing; partial discharge measurement; point defects; surface discharges; trees (electrical); Kohonen network; average discharge current; average discharge power; defect classification; electrical tree; partial discharge; peak charge; repetition rate; solid insulation material; statistical method; surface discharge; void discharge; Chemical compounds; Classification tree analysis; Degradation; Dielectrics and electrical insulation; Fault location; Partial discharges; Solids; Statistical analysis; Surface cracks; Surface discharges;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Properties and Applications of Dielectric Materials, 2000. Proceedings of the 6th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
0-7803-5459-1
Type :
conf
DOI :
10.1109/ICPADM.2000.876338
Filename :
876338
Link To Document :
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