A new approach to Monte Carlo simulation

Author

Jacoboni, C.

Author_Institution

Dipartimento di Fisica, Modena Univ., Italy

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

469

Lastpage

472

Abstract

A novel theoretical approach to Monte Carlo simulation of electron transport in semiconductors is presented. It is based on an iterative expansion of the transport equation and contains several features of interest: the simulated electrons can be guided towards regions of particular interest; the simulation can be performed backward in time starting from any state of interest; and the procedure can be applied to any transport equation, including quantum transport equations, and it contains the standard ensemble Monte Carlo algorithm as a special case. Some results obtained for specific situations of interest are presented.<>

Keywords

Boltzmann equation; Monte Carlo methods; hot carriers; semiconductor device models; semiconductors; Boltzmann transport equation; Monte Carlo simulation; WEMC technique; backward simulation; electron simulation; electron transport; iterative expansion; quantum transport equations; semiconductors; standard ensemble Monte Carlo algorithm; transport equation; Boltzmann equation; Discrete event simulation; Distribution functions; Electromagnetic compatibility; Electrons; Information resources; Integral equations; Monte Carlo methods; Particle scattering; Poisson equations;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74323

Filename

74323