Impact of the minority carrier outflow (MCO) effect on the /spl alpha/-particle-induced soft error of scaled DRAMs

Author

Oowaki, Y. ; Mabuchi, K. ; Hasegawa, T. ; Manabe, S. ; Watanabe, S. ; Ohuchi, K. ; Masuoka, F.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

627

Lastpage

630

Abstract

This paper describes the new /spl alpha/-particle induced soft error mechanism, the Minority Carrier Outflow (MCO) effect which seriously affects the reliability of the scaled DRAMs with three dimensional capacitors. The MCO charge increases as the device scales down because the initially generated charge becomes larger as the stack height or trench depth increases and also because the minority carrier density increases as the storage node volume decreases. The life time of the minority carrier in the storage node strongly affects the MCO charge, however, even when the life time is as small as /spl sim/100 ps, the MCO effect can be the major soft error mechanism.<>

Keywords

DRAM chips; alpha-particle effects; carrier density; carrier lifetime; errors; integrated circuit modelling; integrated circuit reliability; minority carriers; /spl alpha/-particle-induced soft error; dynamic RAM; minority carrier density; minority carrier outflow; reliability; scaled DRAMs; three dimensional capacitors; Analytical models; Capacitance; Capacitors; Charge carrier lifetime; Charge carrier processes; Equations; Random access memory; Research and development; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383332

Filename

383332