Title :
Reliability of thin SiO/sub 2/ at direct-tunneling voltages
Author :
Schuegraf, K.F. ; Donggun Park ; Chenming Hu
Author_Institution :
Micron Technol. Inc., Boise, ID, USA
Abstract :
We investigate the factors that impact thickness scaling of silicon dioxide gate insulators in VLSI technology. At low voltages, the direct-tunneling mechanism is shown to result in oxide leakage current orders-of-magnitude higher than predicted by Fowler-Nordheim theory. Both intrinsic and defect oxide breakdown reliability is accurately predicted at low voltages using the anode hole injection model. The stability of device parameters is investigated to show feasible MOSFET operation in the low voltage, direct-tunneling regime.<>
Keywords :
MOS integrated circuits; VLSI; electric breakdown; insulating thin films; integrated circuit modelling; integrated circuit reliability; leakage currents; silicon compounds; tunnelling; MOSFET operation; SiO/sub 2/; VLSI technology; anode hole injection model; device parameters; direct-tunneling voltages; gate insulators; oxide breakdown reliability; oxide leakage current; thickness scaling; Anodes; Breakdown voltage; Insulation; Leakage current; Low voltage; Predictive models; Silicon compounds; Silicon on insulator technology; Stability; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383336
