Reliability of thin SiO/sub 2/ at direct-tunneling voltages

Author

Schuegraf, K.F. ; Donggun Park ; Chenming Hu

Author_Institution

Micron Technol. Inc., Boise, ID, USA

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

609

Lastpage

612

Abstract

We investigate the factors that impact thickness scaling of silicon dioxide gate insulators in VLSI technology. At low voltages, the direct-tunneling mechanism is shown to result in oxide leakage current orders-of-magnitude higher than predicted by Fowler-Nordheim theory. Both intrinsic and defect oxide breakdown reliability is accurately predicted at low voltages using the anode hole injection model. The stability of device parameters is investigated to show feasible MOSFET operation in the low voltage, direct-tunneling regime.<>

Keywords

MOS integrated circuits; VLSI; electric breakdown; insulating thin films; integrated circuit modelling; integrated circuit reliability; leakage currents; silicon compounds; tunnelling; MOSFET operation; SiO/sub 2/; VLSI technology; anode hole injection model; device parameters; direct-tunneling voltages; gate insulators; oxide breakdown reliability; oxide leakage current; thickness scaling; Anodes; Breakdown voltage; Insulation; Leakage current; Low voltage; Predictive models; Silicon compounds; Silicon on insulator technology; Stability; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383336

Filename

383336