• DocumentCode
    2526129
  • Title

    Development and optimization of GaAs/Ge single junction solar cells

  • Author

    Bollani, B. ; Campesato, R. ; Flores, C. ; Paletta, F. ; Passoni, D. ; Timo, G. ; Tosoni, A. ; Caon, A. ; Rossi, E. ; Signorini, C. ; Crabb, R.L.

  • Author_Institution
    CISE SpA, Segrate, Italy
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    295
  • Abstract
    Thin GaAs/Ge MOCVD solar cells have been developed in order to overcome the high cost and fragility of the more conventional GaAs/GaAs cells. Test results are presented for 120 and 200 μm thick, 2×2 and 2×4 cm2 solar cells with an efficiency up to 19% AMO 25 C. The GaAs/Ge cells have been subjected to a complete testing procedure including electron (1 MeV) and proton (10 MeV) irradiation
  • Keywords
    III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; solar cells; 120 micron; 200 micron; GaAs-Ge solar cells; MOCVD; semiconductors; single junction solar cells; Costs; Electrons; Gallium arsenide; Inductors; MOCVD; P-n junctions; Photovoltaic cells; Space vehicles; Substrates; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169218
  • Filename
    169218
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2526129