Title :
Development and optimization of GaAs/Ge single junction solar cells
Author :
Bollani, B. ; Campesato, R. ; Flores, C. ; Paletta, F. ; Passoni, D. ; Timo, G. ; Tosoni, A. ; Caon, A. ; Rossi, E. ; Signorini, C. ; Crabb, R.L.
Author_Institution :
CISE SpA, Segrate, Italy
Abstract :
Thin GaAs/Ge MOCVD solar cells have been developed in order to overcome the high cost and fragility of the more conventional GaAs/GaAs cells. Test results are presented for 120 and 200 μm thick, 2×2 and 2×4 cm2 solar cells with an efficiency up to 19% AMO 25 C. The GaAs/Ge cells have been subjected to a complete testing procedure including electron (1 MeV) and proton (10 MeV) irradiation
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; solar cells; 120 micron; 200 micron; GaAs-Ge solar cells; MOCVD; semiconductors; single junction solar cells; Costs; Electrons; Gallium arsenide; Inductors; MOCVD; P-n junctions; Photovoltaic cells; Space vehicles; Substrates; Testing;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169218
