Title :
Direct measurement of transit time effects in MODFETs
Author :
Sheridan, J.A. ; Nechay, B.A. ; Bloom, D.M. ; Solomon, P.M. ; Pao, Y.C.
Author_Institution :
Edward L. Ginzton Lab., Stanford Univ., CA, USA
Abstract :
We report measurement of electron transit time effects in short-channel modulation-doped field-effect transistors (MODFETs) with single-picosecond temporal resolution. We believe these are the first time-resolved experimental observations of transient carrier transport in electronic devices on this time scale.<>
Keywords :
high electron mobility transistors; semiconductor device testing; transit time devices; MODFETs; electron transit time effects; short-channel modulation-doped field-effect transistors; single-picosecond temporal resolution; time scale; time-resolved experimental observations; transient carrier transport; Coplanar waveguides; Electrons; FETs; HEMTs; MODFET circuits; Photoconductivity; Switches; Time measurement; Velocity measurement; Voltage;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383342
