Title :
Broadband MMIC Mixer with high output power using InGaP/GaAs HBT technology
Author :
Choi, Won-Jun ; Lee, Young-Ho ; Kim, Nam-Young
Author_Institution :
Kwangwoon Univ., Seoul
Abstract :
In this paper, an InGaP/GaAs HBT Broadband MMIC Mixer with high output power is designed within a total chip area of 1.3 x 1.0 mm2. The down-conversion mixer shows return loss of -10 dB and a conversion gain of +2.6 dB in the broadband frequency range of 400 MHz to 8 GHz. It also shows a third-order input intercept point (IIP3) of+ 16.78 dBm, a third-order output intercept point (OIP3) of +19.38 dBm, and an output-referred 1-dB compression point (PldB,out) of+10 dBm. The LO-RF leakage is -84dBm and LO-IF is -60 dBm, respectively.
Keywords :
III-V semiconductors; MMIC mixers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; GaAs; HBT technology; InGaP; broadband MMIC mixer; down-conversion mixer; third-order input intercept point; third-order output intercept point; Broadband amplifiers; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit technology; MMICs; Mixers; Power generation; Radio frequency; Semiconductor process modeling;
Conference_Titel :
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-002-6
DOI :
10.1109/EMICC.2007.4412750