Title :
Practical Monte Carlo sputter deposition simulation with quasi-axis-symmetrical (QAS) approximation
Author :
Yamada, H. ; Shinmura, T. ; Yamada, Y. ; Ohta, T.
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Kanagawa, Japan
Abstract :
A practical Monte Carlo (MC) sputter deposition profile model has been developed to achieve accurate profile simulation within reasonable calculation time. The key features of the model are: (1) a quasi-axi-symmetrical (QAS) approximation which enables to convert 3D trajectories of incident atoms into 2D sputter deposition profiles in terms of the string model, and (2) calculation of the collision cross-section by means of Lennard-Jones potential. The simulated profiles of collimated-sputter titanium (Ti) in contact holes well agree with the experimental SEM profiles within 5% accuracy.<>
Keywords :
Monte Carlo methods; approximation theory; semiconductor process modelling; simulation; sputter deposition; 2D sputter deposition profiles; 3D incident atom trajectories; Lennard-Jones potential; Monte Carlo simulation; collision cross-section; deposition profile model; quasi-axis-symmetrical approximation; sputter deposition simulation; string model; Atomic layer deposition; Atomic measurements; Collimators; Geometry; Laboratories; Monte Carlo methods; Predictive models; Solid modeling; Sputtering; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383347
