DocumentCode
252639
Title
Silicon microspeaker with out-of-plane displacement
Author
Glacer, Christoph ; Dehe, A. ; Tumpold, David ; Laur, Rainer
Author_Institution
Inst. for Electromagn. Theor., Univ. of Bremen, Bremen, Germany
fYear
2014
fDate
13-16 April 2014
Firstpage
12
Lastpage
16
Abstract
In this paper a new way of increasing the enclosed air volume between the stator and the membrane of an electrostatic loudspeaker is introduced. Instead of using a thicker sacrificial layer, a stress-induced self-raising of the stator is utilized. Corrugation grooves in combination with highly tensile silicon nitride rings are causing a deflection of the stator after the release etch. For a stator diameter of 1 mm an out of plane deflection of up to 59 μm could be measured. On the electrical side, a pull-in voltage between 4 V and 16 V for the membrane and 27 V to 67 V for different stator variants was detected. In the free-field, a sound pressure level of 50 dB SPL at 10 kHz in 10 cm distance was measured for a small array. Variations of design and layout as well as technology parameters were varied to determine the ideal system with regard to maximum deflection, displaced volume and mechanical stability.
Keywords
elemental semiconductors; loudspeakers; silicon; silicon compounds; stators; Si; SiN; electrostatic loudspeaker; enclosed air volume; out-of-plane displacement; silicon microspeaker; size 1 mm; sound pressure level; stator; stress-induced self-raising; tensile silicon nitride rings; thicker sacrificial layer; voltage 16 V; voltage 27 V to 67 V; voltage 4 V; Electrostatics; Layout; Loudspeakers; Micromechanical devices; Sensors; Silicon compounds; Stators;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems (NEMS), 2014 9th IEEE International Conference on
Conference_Location
Waikiki Beach, HI
Type
conf
DOI
10.1109/NEMS.2014.6908749
Filename
6908749
Link To Document