CMOS membrane infrared sensors and improved TMAHW etchant

Author

Lenggenhager, R. ; Jaeggi, D. ; Malcovati, P. ; Duran, H. ; Baltes, H. ; Doering, E.

Author_Institution

Phys. Electron. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

531

Lastpage

534

Abstract

We report the design and fabrication of thermoelectric infrared sensors realized using industrial CMOS IC technologies combined with a subsequent anisotropic etching step. Back etched two-element sensors together with on-chip low-noise operational amplifiers for an intrusion alarm are presented. The etch characteristics of an improved TMAHW (tetramethyl ammonium-hydroxide water) etching solution which could be used instead of KOH are also described.<>

Keywords

CMOS analogue integrated circuits; alarm systems; electric sensing devices; etching; infrared detectors; integrated circuit technology; membranes; operational amplifiers; thermoelectric devices; thermopiles; CMOS membrane IR sensors; Si; TMAHW etchant; anisotropic etching step; back etched two-element sensors; etch characteristics; fabrication; industrial CMOS IC technologies; infrared sensors; intrusion alarm; onchip low-noise opamp; operational amplifiers; tetramethyl ammonium-hydroxide water etching solution; thermoelectric IR sensors; Anisotropic magnetoresistance; Biomembranes; CMOS integrated circuits; CMOS technology; Etching; Fabrication; Infrared sensors; Sensor phenomena and characterization; Textile industry; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383352

Filename

383352