CMOS-based technology for integrated optoelectronics: a modular approach

Author

Fullin, E. ; Voirin, G. ; Chevroulet, M. ; Lagos, A. ; Moret, J.-M.

Author_Institution

CSEM, Swiss Center for Electron. & Microtechnol. Inc., Neuchatel, Switzerland

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

527

Lastpage

530

Abstract

The optoelectronic version of an existing industrial 2 /spl mu/m CMOS process has been developed. With the new technology, single mode strip waveguides, photodiodes and waveguide-to-photodiode couplers have been integrated together with standard CMOS devices. Thanks to a modular approach, the properties of the core process have not been altered. The bandwidth of the basic system, consisting of a curved waveguide coupled to a photodiode and a transimpedance amplifier, is higher than 1.5 MHz at a wavelength of 780 nm. As an example, an unbalanced interferometer with on-chip amplifier has been qualified.<>

Keywords

CMOS integrated circuits; integrated circuit technology; integrated optoelectronics; light interferometers; optical planar waveguides; photodiodes; 1.5 MHz; 780 nm; CMOS-based technology; OEIC; curved waveguide; integrated optoelectronics; onchip amplifier; photodiodes; single mode strip waveguides; transimpedance amplifier; unbalanced interferometer; waveguide-to-photodiode couplers; CMOS process; CMOS technology; Electromagnetic waveguides; Integrated optoelectronics; Optical interferometry; Optical sensors; Optical signal processing; Optical waveguides; Photodiodes; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383353

Filename

383353