DocumentCode
2526482
Title
Dielectric properties of SrTiO3 thin films prepared by RF sputtering
Author
Lee, Woo Sun ; Kim, Nam Oh ; Kim, Jong Kwan ; Kim, Sang Yong
Author_Institution
Dept. of Electr. Eng., Chosun Univ., Kwangju, South Korea
Volume
2
fYear
2000
fDate
2000
Firstpage
888
Abstract
Thin films of dielectric STO have been prepared on Si-wafers by means of the conventional rf-magnetron sputtering technique. The dielectric and electric conduction properties of the films have been studied. The results showed that lower leakage current and the capacitance-voltage behavior of MIS structures indicated dielectric permittivity in the accumulation region and also a good STO/Si interface. The films exhibited a dielectric constant of 300, leakage current of 4×105 A/cm2 at a bias of 5 V and a charge storage density of about 2.5 μC/μm2. The resistivity of films deposited on silicon substrates was very high. SEM analyses showed that STO films have a uniform and fine grain structure
Keywords
crystal microstructure; dielectric thin films; electrical resistivity; leakage currents; permittivity; scanning electron microscopy; sputter deposition; strontium compounds; MIS structures; RF sputtering; SEM; Si; Si-wafers; SrTiO3; capacitance-voltage behavior; charge storage density; dielectric constant; grain structure; leakage current; permittivity; resistivity; thin films; Capacitance-voltage characteristics; Conductive films; Conductivity; Dielectric constant; Dielectric thin films; Leakage current; Permittivity; Semiconductor films; Silicon; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Properties and Applications of Dielectric Materials, 2000. Proceedings of the 6th International Conference on
Conference_Location
Xi´an
Print_ISBN
0-7803-5459-1
Type
conf
DOI
10.1109/ICPADM.2000.876371
Filename
876371
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