DocumentCode :
2526493
Title :
Physics and applications of low-dimensional organic thin-film transistors
Author :
Dodabalapur, A. ; Katz, H.E. ; Torsi, L.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fYear :
1994
fDate :
11-14 Dec. 1994
Firstpage :
515
Lastpage :
518
Abstract :
We describe the electrical characteristics of thin film transistors with active layers made with /spl alpha/-hexathienylene. The on-conductance in these transistors is two-dimensional. The mobility of field induced carriers and the shape of the current-voltage characteristics depend on the channel length. With interdigitated source-drain regions we have achieved on/off ratios of more than 10/sup 5/.<>
Keywords :
carrier mobility; insulated gate field effect transistors; organic semiconductors; thin film transistors; /spl alpha/-hexathienylene active layers; channel length; current-voltage characteristics; electrical characteristics; field induced carrier mobility; interdigitated source-drain regions; low-dimensional organic TFT; on-conductance; thin-film transistors; Conducting materials; Conductivity; Current-voltage characteristics; Dielectric substrates; Gold; Organic thin film transistors; Physics; Polymers; Thin film transistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-2111-1
Type :
conf
DOI :
10.1109/IEDM.1994.383356
Filename :
383356
Link To Document :
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