Improved electrical characteristics of thin-film transistors fabricated on nitrogen implanted polysilicon films

Author

Chien Kuo Yang ; Tan Fu Lei ; Chung Len Lee

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

505

Lastpage

508

Abstract

In this work, we report the first study on thin-film transistors (TFT´s) which were fabricated on nitrogen-implanted polysilicon thin films. Various nitrogen doses ranging from 2/spl times/10/sup 12/ to 2/spl times/10/sup 14/ ions/cm/sup 2/ were implanted into the active polysilicon films before the gate-oxide growth. It is found that the nitrogen implantation combined with the use of the H/sub 2/-plasma passivation significantly improved the electrical characteristics of the TFT´s. It is believed that the passivation and donor effects of nitrogen were responsible for the improved characteristics.<>

Keywords

MOSFET; elemental semiconductors; ion implantation; nitrogen; passivation; silicon; thin film transistors; H/sub 2/; H/sub 2/-plasma passivation; N implantation; N implanted polysilicon films; Si:N; TFT electrical characteristics; active polysilicon films; donor effects; thin-film transistors; Boron; Degradation; Dielectrics; Electric variables; Hot carriers; Nitrogen; Passivation; Silicon; Thin film transistors; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383358

Filename

383358