A MEM varactor tuned-voltage controlled oscillator fabricated using 0.35μm SiGe BiCMOS Technology

Author

Heves, Emre ; Kaynak, Mehmet ; Esame, Onur ; Tekin, Ibrahim ; Gurbuz, Yasar

Author_Institution

Sabanci Univ., Istanbul

fYear

2007

fDate

8-10 Oct. 2007

Firstpage

536

Lastpage

539

Abstract

In this paper, design and realization of a parallel plate dual gap MEM-Varactor based -Gm LC voltage controlled oscillator (VCO) is presented. The VCO is implemented with AMS 0.35 mum-SiGe BiCMOS process that includes high-speed SiGe heterojunction bipolar transistors (HBTs). MEM-Varactor is fabricated in Sabanci University´s cleanroom and includes six layers and five mask steps. MEM-varactor and VCO is integrated on a FR4 substrate using wire bonder. With the actuation voltage of 0 to 10 V, 70 MHz tuning range is measured from MEM-varactor integrated VCO that is in the range 7.72 GHz to 7.80 GHz. Fundamental frequency output power changes between -2 dBm and 0 dBm, without the losses depending on the tuning voltage.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC oscillators; heterojunction bipolar transistors; semiconductor materials; varactors; voltage-controlled oscillators; BiCMOS Technology; MEM varactor tuned-voltage controlled oscillator; SiGe; VCO; frequency 7.72 GHz to 7.80 GHz; frequency 70 MHz; heterojunction bipolar transistors; size 0.35 mum; voltage 0 V to 10 V; wire bonder; BiCMOS integrated circuits; Bonding; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Tuning; Varactors; Voltage; Voltage-controlled oscillators; Wire; Index Terms; MEM Varactor; RFIC; SiGe BiCMOS; VCO;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European

Conference_Location

Munich

Print_ISBN

978-2-87487-002-6

Type

conf

DOI

10.1109/EMICC.2007.4412768

Filename

4412768