DocumentCode
2526634
Title
Dielectric charging process in AlN RF-MEMS capacitive switches
Author
Papaioannou, George J. ; Lisec, Tomas
Author_Institution
Nat. Kapodistrian Univ. of Athens, Athens
fYear
2007
fDate
8-10 Oct. 2007
Firstpage
540
Lastpage
543
Abstract
The paper investigates the electrical properties of magnetron sputtered AlN in view of application in RF-MEMS capacitive switches. The assessment is performed with the aid of application of thermally stimulate polarization currents in MIM capacitors and temperature dependence of device capacitance. The study reveals the presence of a surface charge, which is smaller than the expected from material spontaneous polarization, but definitely is responsible for the low degradation rate under certain bias polarization life tests.
Keywords
MIM devices; capacitors; switches; AlN RF-MEMS capacitive switches; MIM capacitors; bias polarization life tests; device capacitance; dielectric charging process; magnetron sputtered AlN; thermally stimulate polarization currents; Capacitance; Dielectrics; MIM capacitors; Magnetic materials; Magnetic properties; Magnetic switching; Polarization; Radiofrequency microelectromechanical systems; Switches; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location
Munich
Print_ISBN
978-2-87487-002-6
Type
conf
DOI
10.1109/EMICC.2007.4412769
Filename
4412769
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