DocumentCode
252664
Title
Workability and reliability assessment of various high bandwidth PoP structures
Author
Hung, M. ; Huang, L. ; Lin, T. ; Chen, E. ; Huang, E. ; Ding, Y.C.
Author_Institution
Adv. Semicond. Eng., Adv. Semicond. Eng., Inc., Kaohsiung, Taiwan
fYear
2014
fDate
3-5 Dec. 2014
Firstpage
36
Lastpage
41
Abstract
Package-on-package has become the mainstream solution for the high bandwidth package which is used between application processor and memory of a smartphone. In order to get bandwidth increased, one way is to increase the number of data I/O, consequently the size and pitch of interconnects have to be reduced. Therefore, an improvement of current PoP structure to increase the number of interconnects and to reduce the pitch become very important and imperative. In this work, three High Bandwidth PoP (HB PoP) structures are proposed and investigated in workability, reliability, and high/room temperature warpage performance through fabricating. Compared with conventional PoP, the study shows that the proposed HB PoPs have superior reliability and warpage performance, and is comparable workability with conventional PoP.
Keywords
electronics packaging; reliability; HB PoP; high bandwidth PoP structures; high warpage performance; package-on-package; reliability assessment; temperature 293 K to 298 K; workability assessment; Bandwidth; Bonding; Reliability; Silicon; Stacking; Substrates; CuPI (Cu Pillar Interconnection); High I/O Count; High bandwidth PoP; SPHI (Solder Pillar Hybrid Interconnection); SeLI (Solder embedded Lamination Interconnection; Substrate Interposer (SI);
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference (EPTC), 2014 IEEE 16th
Conference_Location
Singapore
Type
conf
DOI
10.1109/EPTC.2014.7028276
Filename
7028276
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