AC frequency-resolved measurements for direct extraction of the parasitic resistance of individual MOSFETs

This work presents a new technique to measure directly the parasitic resistance in series with source and drain of individual MOSFETs (R) and the device conductivity factor (/spl beta/). The method works at constant gate-source voltage (V/sub GS/) and negligibly small drain-source voltage (V/sub DS/). The dependence of R and /spl beta/ on the transversal field can be derived by repeating the measurements at different V/sub GS/ and V/sub SB/. The technique makes use of AC measurements that overcome previous problems related to noise and instability.<>