Title :
Electrothermal behavior of deep submicron nMOS transistors under high current snapback (ESD/EOS) conditions
Author :
Amerasekera, A. ; Seitchik, J.A.
Author_Institution :
Semicond. Process & Device Center, Texas Instrum. Inc., Dallas, TX, USA
Abstract :
We present the underlying mechanisms of second breakdown in deep submicron nMOS transistors under high current snapback conditions. The onset of second breakdown is shown to be determined by a rapid increase in the thermally generated component of the substrate (base) current. Simplified simulation methodologies for evaluating high current robustness using isothermal device simulations are demonstrated and good correlations with experimental data have been obtained.<>
Keywords :
MOSFET; electric breakdown; electrostatic discharge; semiconductor device models; simulation; thermal analysis; EOS; ESD; NMOS transistors; deep submicron NMOSFET; electrothermal behavior; high current robustness; high current snapback conditions; isothermal device simulations; n-channel MOSFET; second breakdown; simulation methodologies; substrate current; Earth Observing System; Electric breakdown; Electrostatic discharge; Electrothermal effects; Isothermal processes; MOS devices; MOSFETs; Process design; Robustness; Voltage;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383370
