Title :
Analysis of dopant metrology using scanning capacitance microscopy and transmission electron microscopy as complementary techniques
Author :
Natarajan, M. ; Sheng, T.T. ; Pey, K.L. ; Lee, Y.P. ; Radhakrishnan, M.K.
Author_Institution :
Inst. of Microelectron., Singapore
Abstract :
The results of physical analysis carried out on Dynamic Random Access Memory (DRAM) devices, using Scanning Capacitance Microscopy (SCM) and Transmission Electron Microscopy (TEM) to investigate specifically the dopant profile at the sidewall of the trench capacitor structures is presented here. The SCM results provide information on the dopant metrology on samples, whereas the TEM analysis, which includes junction delineation, further supports the finding of dopant distribution as well as other physical phenomena
Keywords :
DRAM chips; capacitance measurement; doping profiles; integrated circuit measurement; scanning probe microscopy; transmission electron microscopy; DRAM devices; dopant distribution; dopant metrology; dopant profile; junction delineation; scanning capacitance microscopy; sidewall; transmission electron microscopy; trench capacitor structures; Atomic force microscopy; Electrical capacitance tomography; Integrated circuit measurements; Metrology; Random access memory; Scanning electron microscopy; Scanning probe microscopy; Silicon; Transmission electron microscopy; Voltage;
Conference_Titel :
Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on
Print_ISBN :
0-7803-3985-1
DOI :
10.1109/IPFA.1997.638126
