Title :
Influence of chromium oxide additive on electrical characteristics of ZnO varistor
Author :
Han, Se-Won ; He, Jin-Liang ; Cho, Han-Goo ; Tu, You-Ping ; Zeng, Rong
Author_Institution :
Div. of Electr. Mater., Korea Electrotechnol. Res. Inst., Changwon, South Korea
Abstract :
The effect of chromium oxide (Cr2O3) additive on the electrical characteristics of ZnO-Bi2O3 -Sb2O3-based ZnO varistors in the prebreakdown and breakdown regions was studied by comparing the electrical properties of three different system samples. When Cr2 O3 is added into ZnO varistor, the breakdown voltage and the nonlinearity coefficient decrease. Cr2O3 increases the leakage current in the breakdown region and reduces the voltage ratio in the breakdown region, which leads to bad electrical characteristics. C-V characteristics show that this deterioration is related to lower barrier height, donor concentration, and interface defect density of the intergranular layer of the O varistor
Keywords :
II-VI semiconductors; antimony compounds; bismuth compounds; capacitance; chromium compounds; interface states; leakage currents; semiconductor device breakdown; semiconductor device measurement; varistors; zinc compounds; C-V characteristics; Cr2O3 addition; ZnO; ZnO varistor; ZnO-Bi2O3-Sb2O3-Cr 2O3; ZnO-Bi2O3-Sb2O3-Cr 2O3 varistors; barrier height; breakdown region; breakdown voltage; donor concentration; electrical characteristics; interface defect density; intergranular layer; leakage current; nonlinearity coefficient; prebreakdown region; voltage ratio; Additives; Breakdown voltage; Chromium; Electric breakdown; Electric variables; Grain boundaries; Grain size; Leakage current; Varistors; Zinc oxide;
Conference_Titel :
Properties and Applications of Dielectric Materials, 2000. Proceedings of the 6th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
0-7803-5459-1
DOI :
10.1109/ICPADM.2000.876389
