Influence of chromium oxide additive on electrical characteristics of ZnO varistor

Author

Han, Se-Won ; He, Jin-Liang ; Cho, Han-Goo ; Tu, You-Ping ; Zeng, Rong

Author_Institution

Div. of Electr. Mater., Korea Electrotechnol. Res. Inst., Changwon, South Korea

Volume

2

fYear

2000

fDate

2000

Firstpage

957

Abstract

The effect of chromium oxide (Cr₂O₃) additive on the electrical characteristics of ZnO-Bi₂O₃-Sb₂O₃-based ZnO varistors in the prebreakdown and breakdown regions was studied by comparing the electrical properties of three different system samples. When Cr₂O₃ is added into ZnO varistor, the breakdown voltage and the nonlinearity coefficient decrease. Cr₂O₃ increases the leakage current in the breakdown region and reduces the voltage ratio in the breakdown region, which leads to bad electrical characteristics. C-V characteristics show that this deterioration is related to lower barrier height, donor concentration, and interface defect density of the intergranular layer of the O varistor

Keywords

II-VI semiconductors; antimony compounds; bismuth compounds; capacitance; chromium compounds; interface states; leakage currents; semiconductor device breakdown; semiconductor device measurement; varistors; zinc compounds; C-V characteristics; Cr₂O₃ addition; ZnO; ZnO varistor; ZnO-Bi₂O₃-Sb₂O₃-Cr ₂O₃; ZnO-Bi₂O₃-Sb₂O₃-Cr ₂O₃ varistors; barrier height; breakdown region; breakdown voltage; donor concentration; electrical characteristics; interface defect density; intergranular layer; leakage current; nonlinearity coefficient; prebreakdown region; voltage ratio; Additives; Breakdown voltage; Chromium; Electric breakdown; Electric variables; Grain boundaries; Grain size; Leakage current; Varistors; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Properties and Applications of Dielectric Materials, 2000. Proceedings of the 6th International Conference on

Conference_Location

Xi´an

Print_ISBN

0-7803-5459-1

Type

conf

DOI

10.1109/ICPADM.2000.876389

Filename

876389