Title :
Package-level Si-based micro-jet impingement cooling solution with multiple drainage micro-trenches
Author :
Yong Han ; Boon Long Lau ; Hengyun Zhang ; Xiaowu Zhang
Author_Institution :
Inst. of Microelectron., Singapore, Singapore
Abstract :
High heat flux removal is a major consideration in the design of a number of microelectronic devices. A Si micro cooler, combining the merits of both micro-channels and jet impingement, has been developed to dissipate the heat flux for the IC chip. Multiple drainage micro-trenches (MDMT) have been designed inside the cooler to avoid the negative cross-flow effect between the nearby nozzles. The effect of the micro-trench width on the required pressure drop is analyzed. Three types of nozzle/trench arrangements are studied. Several simulations are conducted to study the thermal effect of the distance between nozzle and trench, when the same pumping power is supplied. Without cross-flow effect, full developed jet impingement can be achieved for each nozzle. With 0.2W pumping power, the spatially average heat transfer coefficient is around 15×104W/m2K. To dissipate 350W/cm2 heat flux uniformly loaded on the Si chip, the designed micro cooler can maintain the maximum chip temperature rise lower than 25°C, and low temperature variation within the chip. The designed cooler with MDMT is also quite effective for cooling the chip with concentrated heat fluxes.
Keywords :
cooling; elemental semiconductors; jets; microchannel flow; micromechanical devices; silicon; IC chip; MDMT; Si; Si micro cooler; concentrated heat fluxes; heat flux dissipation; heat transfer coefficient; high heat flux removal; jet impingement; low temperature variation; micro-trench width; microchannels; microelectronic devices; multiple drainage micro-trenches; negative cross-flow effect; nozzle-trench arrangements; power 0.2 W; Cooling; Fluids; Heat pumps; Heat transfer; Heating; Load modeling; Silicon;
Conference_Titel :
Electronics Packaging Technology Conference (EPTC), 2014 IEEE 16th
Conference_Location :
Singapore
DOI :
10.1109/EPTC.2014.7028284