Title :
A 200 mm SiGe-HBT technology for wireless and mixed-signal applications
Author :
Harame, D.L. ; Schonenberg, K. ; Gilbert, M. ; Nguyen-Ngoc, D. ; Malinowski, J. ; Jeng, S.-J. ; Meyerson, B. ; Cressler, J.D. ; Groves, R. ; Berg, G. ; Tallman, K. ; Stein, K. ; Hueckel, G. ; Kermarrec, C. ; Tice, T. ; Fitzgibbons, G. ; Walter, K. ; Colav
Author_Institution :
IBM Res. Div., Yorktown Hts., NY, USA
Abstract :
If SiGe-HBT technology is to successfully compete with GaAs technology in the rapidly emerging wireless communications market, it must demonstrate comparable performance, higher integration levels, compatibility with high volume production, and hence reduced costs. This work describes the first manufacturable 0.5 /spl mu/m SiGe-HBT technology for wireless communications applications which meets these requirements. The technology is currently installed on a 200 mm production line, using a commercial UHV/CVD system for SiGe film growth. AC transistor results (f/sub max/>45 GHz, power added efficiency=66%) demonstrate that this 200 mm SiGe technology is suitable for /spl ges/2.0 GHz RF applications. Record performance was achieved in a 1.2 GS/sec, <1.0 W 12-bit digital-to-analog convertor (DAC). Important manufacturing issues for high performance SiGe-HBTs which are addressed in this work include: SiGe epitaxial film defect densities, long-term device reliability, and device scaling.<>
Keywords :
Ge-Si alloys; UHF integrated circuits; bipolar integrated circuits; integrated circuit manufacture; integrated circuit reliability; integrated circuit technology; mixed analogue-digital integrated circuits; semiconductor device reliability; semiconductor materials; vapour phase epitaxial growth; 0.5 micron; 2 GHz; 200 mm; 45 GHz; 66 percent; DAC; HBT technology; IC manufacturing; RF applications; SiGe; SiGe epitaxial film defect densities; SiGe film growth; commercial UHV/CVD system; device scaling; digital-to-analog convertor; long-term device reliability; manufacturable 0.5 /spl mu/m technology; mixed-signal applications; production line; submicron technology; wireless communications applications; Communications technology; Converters; Costs; Gallium arsenide; Germanium silicon alloys; Manufacturing; Production systems; Radio frequency; Silicon germanium; Wireless communication;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383374
