Title :
Technology trends of silicon-on-insulator-its advantages and problems to be solved
Author :
Yoshimi, M. ; Terauchi, M. ; Murakoshi, A. ; Takahashi, M. ; Matsuzawa, K. ; Shigyo, N. ; Ushiku, Y.
Author_Institution :
ULSI Res. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
Recent progress in SOI technology is reviewed and problems which need be solved are discussed. Emphasis is placed on the substrate floating effect, for which the bandgap engineering method is proposed for the first time. It is demonstrated that Si-Ge formation in the source region can improve the drain breakdown voltage significantly.<>
Keywords :
electric breakdown; integrated circuit technology; silicon-on-insulator; SOI technology; Si; Si-Ge formation; SiGe; bandgap engineering method; drain breakdown voltage; source region; substrate floating effect; technology trends; Breakdown voltage; Laboratories; Logic; Low voltage; Multimedia systems; Photonic band gap; Random access memory; Research and development; Silicon on insulator technology; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383376
