Title :
Field-effect transistors and circuits fabricated from semiconducting diamond thin films
Author :
Holmes, J.S. ; Dreifus, D.L.
Author_Institution :
Electron. Mater. Center, Kobe Steel USA Inc., Research Triangle Park, NC, USA
Abstract :
MOSFETs were fabricated on homoepitaxial diamond thin films. The current-voltage characteristics of these transistors were measured from 25/spl deg/C to 500/spl deg/C on selected samples. Improved diamond growth and device fabrication techniques resulted in improved drain-to-source current and transconductance uniformity across a sample. Selected devices exhibit drain-to-source currents and normalized transconductance values of 10 mA and 1.3 mS/mm respectively. A common-source amplifier circuit utilizing a diamond MOSFET was characterized using input signals from 20 Hz to 1 MHz and exhibited a DC gain of 5 at 250/spl deg/C. A pair of diamond MOSFETs configured as NAND and NOR digital logic gates were demonstrated operational at 400/spl deg/C.<>
Keywords :
MOSFET; MOSFET circuits; NAND circuits; NOR circuits; amplifiers; diamond; elemental semiconductors; logic gates; semiconductor epitaxial layers; thin film transistors; vapour phase epitaxial growth; 1.3 mS/mm; 10 mA; 20 Hz to 1 MHz; 25 to 500 C; C; FET circuits; MOSFETs; NAND digital logic gates; NOR digital logic gates; common-source amplifier circuit; current-voltage characteristics; device fabrication techniques; diamond MOSFET; diamond growth; drain-to-source current uniformity; field-effect transistors; homoepitaxial diamond thin films; semiconducting diamond thin films; transconductance uniformity; Circuit testing; FETs; MOSFETs; Semiconductivity; Semiconductor thin films; Silicon; Temperature sensors; Thin film circuits; Thin film transistors; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383377
