Title :
Device integration for ESD robustness of high voltage power MOSFETs
Author :
Duvvury, Charvaka ; Rodriguez, J. ; Jones, C. ; Smayling, M.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
The ESD robustness of a power MOSFET device is addressed in this paper. It is shown that by a novel device integration of the power output transistor with SCR, the ESD performance can be improved from less than 2 kV to greater than 6 kV. This is accomplished with no impact on the transistor performance or its application in circuit design.<>
Keywords :
electrostatic discharge; power MOSFET; semiconductor device reliability; thyristors; 6 kV; ESD robustness; SCR; circuit design; device integration; high voltage power MOSFETs; power output transistor; transistor performance; Automotive engineering; Electrostatic discharge; Instruments; MOS devices; MOSFETs; Power dissipation; Power transistors; Robustness; Thyristors; Voltage;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383381
