• DocumentCode
    2526961
  • Title

    A monolithic RMS-DC converter using planar diaphragm structures

  • Author

    Yoon, E. ; Wise, K.D.

  • Author_Institution
    Solid-State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA
  • fYear
    1989
  • fDate
    3-6 Dec. 1989
  • Firstpage
    491
  • Lastpage
    494
  • Abstract
    A monolithic RMS-DC converter for measuring wideband RMS signals is presented. Two identical thermoelements for thermal RMS-DC conversion are formed using planar diaphragm structures and micromachined dielectric windows. Each thermoelement consists of two polysilicon heaters and a thin-film temperature sensor located on a window and operated at constant temperature using on-chip control feedback circuitry. The thermoelements achieve a thermal efficiency greater than 7 degrees C/mW with thermal time constant less than 5 ms. The on-chip control circuitry is realized using a standard 3- mu m p-well CMOS process with minor modifications for process compatibility with the dielectric window formation. This converter measures RMS signals over a full scale range of 1 V RMS, handles crest factors in excess of five, exhibits a typical nonlinearity of less than 1%, and achieves a 3-dB bandwidth greater than 20 MHz.<>
  • Keywords
    CMOS integrated circuits; convertors; diaphragms; electric sensing devices; micromechanical devices; signal processing equipment; thermal variables measurement; 3 micron; bandwidth; constant temperature; crest factors; dielectric window formation; micromachined dielectric windows; monolithic RMS-DC converter; nonlinearity; on-chip control feedback circuitry; p-well CMOS process; planar diaphragm structures; polysilicon; polysilicon heaters; process compatibility; thermal RMS-DC conversion; thermal efficiency; thermal time constant; thermoelements; thin-film temperature sensor; wideband RMS signals; Bandwidth; CMOS process; Dielectric measurements; Dielectric thin films; Feedback circuits; Temperature control; Temperature sensors; Thin film circuits; Thin film sensors; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
  • Conference_Location
    Washington, DC, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-0817-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1989.74328
  • Filename
    74328