Title :
New (super) self aligned MOS controlled thyristors, (S)SAMCTs, switching 20 A at 4 kV
Author :
Dettmer, H. ; Fichtner, W. ; Bauer, P.
Author_Institution :
Integrated Syst. Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
New MOS controlled thyristor structures, called (Super) Self Aligned MOS Controlled Thyristors, (S)SAMCTs, have been fabricated and characterized. A simplified cathode structure in which all critical layers are self aligned enables the fabrication of reliable large area devices with reduced technology complexity. Small experimental devices show equivalent electrical performance compared to conventional MCTs. Successfully fabricated large area (1 cm/sup -2/) SAMCTs are able to turn off 20 A at 4 kV in 5 /spl mu/s under inductive load without any snubber.<>
Keywords :
MIS devices; MOS-controlled thyristors; semiconductor switches; semiconductor technology; (S)SAMCTs; (super) self aligned MOS controlled thyristors; 20 A; 4 kV; 5 mus; cathode structure; critical layers; electrical performance; inductive load; large area devices; self aligned layers; technology complexity; Costs; FETs; Fabrication; Graphics; Laboratories; MOSFET circuits; Silicon compounds; Snubbers; Thyristors; Voltage;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383384
