Title :
Design of 2-stage medium power amplifier using 0.5 μm GaAs PHEMT for wireless LAN applications
Author :
Rasmi, A. ; Marzuki, A. ; Ismail, M. Azmi ; Rahim, A. I Abdul ; Yahya, M. Razman ; Mat, A. Fatah Awang
Author_Institution :
Telekom Res. & Dev. Sdn Bhd, UPM-MTDC, Serdang
Abstract :
This paper presents the design and fabrication of two-stage medium power amplifier (MPA) using 0.5 mum GaAs PHEMT technology for the wireless LAN applications. The die size of this amplifier is only 1.7 mm times 0.85 mm. At a supply voltage of 5.0 V and 5.8 GHz operating frequency, a 2-stage MPA achieves a linear gain (S21) of 16.39 dB, P1 dB of 20.18 dBm, power gain of 15.15 dB and the PAE of 25.29%.
Keywords :
HEMT circuits; III-V semiconductors; gallium arsenide; microwave power amplifiers; wireless LAN; 2-stage medium power amplifier design; GaAs; MPA fabrication; PHEMT technology; frequency 5.8 GHz; linear gain; size 0.5 mum; voltage 5 V; wireless LAN; Gain; Gallium arsenide; Impedance matching; PHEMTs; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Resistors; Wireless LAN; 2-stage MPA; 5.8 GHz; GaAs PHEMT; Wireless LAN applications;
Conference_Titel :
TENCON 2008 - 2008 IEEE Region 10 Conference
Conference_Location :
Hyderabad
Print_ISBN :
978-1-4244-2408-5
Electronic_ISBN :
978-1-4244-2409-2
DOI :
10.1109/TENCON.2008.4766538
