DC breakdown properties of gate oxide in MOSFET

Author

Song, Jeong Woo ; Hong, Neung-Pyo ; Lee, Jong-Pil ; Shin, Jong-Yeol ; Kim, Wang-Kon ; Hong, Jin-woong

Author_Institution

Kwangwoon Univ., Seoul, South Korea

Volume

2

fYear

2000

fDate

2000

Firstpage

1033

Abstract

In order to investigate DC (forward-reverse) breakdown properties of gate oxide in MOSFET, two kinds of specimens are manufactured as follows: specimens with thickness of 600 Å and resistivities of 1.2 to 1.8 Ωcm; and specimens with thickness of 800 Å and diffusion times of 110 or 150 min. At the DC dielectric strength for each resistivity, it is confirmed that most of the leakage current and breakdown current flows through the n⁺ source when positive bias is applied but the p region when negative bias is applied. It is thought that dielectric strength due to the diffusion time results from increasing p region

Keywords

electric strength; electrical resistivity; leakage currents; power MOSFET; semiconductor device breakdown; semiconductor device testing; 1.2 to 1.8 ohmcm; 110 min; 150 min; 600 angstrom; 800 angstrom; DC breakdown properties; DC dielectric strength; breakdown current; diffusion times; forward-reverse breakdown properties; gate oxide; leakage current; n⁺ source; negative bias; p region; positive bias; power MOSFET; resistivities; specimen thickness; Breakdown voltage; Conductivity; Dielectric breakdown; Electric breakdown; Electrons; Epitaxial layers; Insulation; MOSFET circuits; Silicon; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Properties and Applications of Dielectric Materials, 2000. Proceedings of the 6th International Conference on

Conference_Location

Xi´an

Print_ISBN

0-7803-5459-1

Type

conf

DOI

10.1109/ICPADM.2000.876409

Filename

876409