Title :
DC breakdown properties of gate oxide in MOSFET
Author :
Song, Jeong Woo ; Hong, Neung-Pyo ; Lee, Jong-Pil ; Shin, Jong-Yeol ; Kim, Wang-Kon ; Hong, Jin-woong
Author_Institution :
Kwangwoon Univ., Seoul, South Korea
Abstract :
In order to investigate DC (forward-reverse) breakdown properties of gate oxide in MOSFET, two kinds of specimens are manufactured as follows: specimens with thickness of 600 Å and resistivities of 1.2 to 1.8 Ωcm; and specimens with thickness of 800 Å and diffusion times of 110 or 150 min. At the DC dielectric strength for each resistivity, it is confirmed that most of the leakage current and breakdown current flows through the n+ source when positive bias is applied but the p region when negative bias is applied. It is thought that dielectric strength due to the diffusion time results from increasing p region
Keywords :
electric strength; electrical resistivity; leakage currents; power MOSFET; semiconductor device breakdown; semiconductor device testing; 1.2 to 1.8 ohmcm; 110 min; 150 min; 600 angstrom; 800 angstrom; DC breakdown properties; DC dielectric strength; breakdown current; diffusion times; forward-reverse breakdown properties; gate oxide; leakage current; n+ source; negative bias; p region; positive bias; power MOSFET; resistivities; specimen thickness; Breakdown voltage; Conductivity; Dielectric breakdown; Electric breakdown; Electrons; Epitaxial layers; Insulation; MOSFET circuits; Silicon; Temperature dependence;
Conference_Titel :
Properties and Applications of Dielectric Materials, 2000. Proceedings of the 6th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
0-7803-5459-1
DOI :
10.1109/ICPADM.2000.876409
