A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures

Author

Ghetti, A. ; Selmi, L. ; Sangiorgi, E. ; Abramo, A. ; Venturi, F.

Author_Institution

DEIS, Bologna Univ., Italy

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

363

Lastpage

366

Abstract

In this paper, we present a unified model for electron and hole transport and injection into the gate oxide of MOS devices based on our Monte Carlo simulator BeBoP. The injection problem has been tackled by means of a simplified analytical solution of the Schrodinger equation across the Si-SiO/sub 2/ gate barrier, that leads to a direct calculation of the transfer probability from Si into the gate (P/sub Si-G/). With appropriate choice of parameters the model reproduces a wide set of experiments sensitive to low and high energy transport phenomena, including for the first time homogeneous hole injection data.<>

Keywords

MIS devices; MOSFET; Monte Carlo methods; Schrodinger equation; hot carriers; probability; semiconductor device models; semiconductor-insulator boundaries; simulation; BeBoP; MOS structures; Monte Carlo simulator; Schrodinger equation; Si-SiO/sub 2/; Si-SiO/sub 2/ gate barrier; combined transport-injection model; electron transport; gate oxide; hole transport; homogeneous hole injection data; hot-electron injection; hot-hole injection; transfer probability; unified model; Acoustic scattering; Charge carrier processes; Hot carriers; Impact ionization; MOSFETs; Monte Carlo methods; Optical scattering; Optical sensors; Phonons; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383391

Filename

383391