Title :
Application of semiclassical device simulation to trade-off studies for sub-0.1 /spl mu/m MOSFETs
Author :
Fiegna, C. ; Iwai, H. ; Saito, M. ; Sangiorgi, E.
Author_Institution :
Inst. di Ingegneria, Ferrara Univ., Italy
Abstract :
In this paper applicability of established semiclassical (SC) simulation techniques to ultra-short gate MOS devices is discussed and comparisons between experimental data of MOS transistors with gate down to 40 nm and simulation results are reported. Finally, examples of applications to the comparison of different device structures are reported.<>
Keywords :
MOSFET; hot carriers; semiconductor device models; silicon-on-insulator; simulation; 40 to 100 nm; EPI devices; MOS transistors; SOI devices; Si; semiclassical device simulation; sub-0.1 /spl mu/m MOSFETs; submicron MOSFET; tradeoff studies; ultra-short gate MOS devices; Boltzmann equation; Laboratories; MOSFETs; Monte Carlo methods; Phonons; Research and development; Silicon; Steady-state; Ultra large scale integration; Uncertainty;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383395
