DocumentCode
2527205
Title
Application of semiclassical device simulation to trade-off studies for sub-0.1 /spl mu/m MOSFETs
Author
Fiegna, C. ; Iwai, H. ; Saito, M. ; Sangiorgi, E.
Author_Institution
Inst. di Ingegneria, Ferrara Univ., Italy
fYear
1994
fDate
11-14 Dec. 1994
Firstpage
347
Lastpage
350
Abstract
In this paper applicability of established semiclassical (SC) simulation techniques to ultra-short gate MOS devices is discussed and comparisons between experimental data of MOS transistors with gate down to 40 nm and simulation results are reported. Finally, examples of applications to the comparison of different device structures are reported.<>
Keywords
MOSFET; hot carriers; semiconductor device models; silicon-on-insulator; simulation; 40 to 100 nm; EPI devices; MOS transistors; SOI devices; Si; semiclassical device simulation; sub-0.1 /spl mu/m MOSFETs; submicron MOSFET; tradeoff studies; ultra-short gate MOS devices; Boltzmann equation; Laboratories; MOSFETs; Monte Carlo methods; Phonons; Research and development; Silicon; Steady-state; Ultra large scale integration; Uncertainty;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-2111-1
Type
conf
DOI
10.1109/IEDM.1994.383395
Filename
383395
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